Advanced Analysis of SiC Power Devices and Radiation Effects

The 1200 V SiC vertical diode has a higher SEB boundary than the 3300 V diode.

The SEB boundary for 3300 V diodes increased by about 300 V compared to 1200 V diodes.

The SEB threshold for SiC devices is influenced by the epitaxial region.

SiC devices show step changes in off-state current for single ion strikes.

The heavy ion test results for SiC devices were presented at the LSIC Fall Workshop in 2023.

The heavy ion-induced current densities in SiC devices are unrelated to electric field redistribution.

The on-resistance of SiC is approximately 6% of that of a silicon device.

The JBS diode variants include variations in window coverage and doping.

The SEB and degradation boundaries for SiC devices are reported in the same study.

Vertical power devices are suitable for both diodes and MOSFETs.

The metal-SiC interface does not affect leakage in SiC devices.

The SEB mechanism in SiC devices is not influenced by heavy ion irradiation.

The SEB threshold for SiC MOSFETs and diodes is different.

The epitaxial region resistance does not influence the performance of vertical power devices.

The SEB in SiC devices is independent of the device’s voltage rating.

The maximum field in a 3D TCAD heavy ion simulation of 1200 V SiC goes from 2 to 3.

The SiC devices show onset of SELC at reverse biases around 50% of the rated breakdown voltage.

The SEB and SELC are both related to single-event effects in SiC devices.

The Vanderbilt Nano-Photonics Laboratory is involved in studying nanoscale light-matter interactions.

The SEB mechanism in SiC devices is unique to each device type.

The Vanderbilt Engineering NEPP ETW 2023 included a focus on radiation-tolerant diode/MOSFET design.

The SEB boundary for SiC devices is influenced by the LET of the ions.

Heavy ion tests for SiC MOSFETs were conducted at TAMU in September 2023.

The 3D TCAD heavy ion sensitivity study aims to increase the voltage rating of devices.

The SEB in 1200 V SiC devices is unrelated to heavy ion data.

The SEB in SiC devices is unrelated to the device’s epitaxial layer.

The program timeline for SiC power devices includes testing at a 3.3 kV baseline.

The radiation goal includes preventing permanent destructive effects at 40 MeV-cm2/mg LET.

The SEB mechanism is similar for both SiC MOSFETs and diodes.

The JBS diodes were delivered to Vanderbilt in April 2023.

The application goal for SiC devices is to support a micro-grid on the moon at 1 kV DC.

The epitaxial layer thickness and doping are adjusted to lower peak electric fields in SiC devices.

The SiC MOSFETs were packaged with a Parylene coating in August 2023.

The heavy ion-induced SEB and degradation data for SiC devices were reported by Mizuta in 2014.

The SiC MOSFETs were tested electrically in July 2023.

The NASA LuSTR Program supports research on single-event effects in SiC devices.

The SEB bias-LET boundary is different for SiC MOSFETs and diodes.

The single-event burnout occurs at around half of the rated VDS for space applications.

The GE SiC MOSFET variants completed the fab run before the wafer test.

The Vanderbilt Engineering NEPP ETW 2023 focused on SiC power devices.

The SEB and SELC are unrelated phenomena in SiC devices.

The fabrication of new SiC JBS diodes was completed before May 2023.

The ion-induced electric field redistribution was simulated for 1200 V, 3300 V, and 4500 V devices.

The heavy ion simulation for 1200 V SiC devices used an LET of 60 MeV-cm2/mg.

The heavy ion test for JBS diodes was planned for the week of July 10th.

The SEE-tolerant SiC power diodes have a minimum voltage rating of 600 V.

The Vanderbilt Engineering NEPP ETW 2023 did not involve any heavy ion tests.

The 3300 V and 4500 V SiC devices show higher electric fields compared to the 1200 V device.

The SEE-tolerant SiC power transistors are normally off.

The fabrication and testing of SiC JBS diodes were completed by May 2023.